Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition

T. G. Jung*, C. Y. Chang, C. S. Liu, T. C. Chang, Horng-Chih Lin, W. C. Tsai, G. W. Huang, L. P. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550°C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10-7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.

Original languageEnglish
Pages (from-to)4921-4923
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number8
DOIs
StatePublished - 1 Dec 1994

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