Characterization of the properties of Mg-doped Al 0.15 Ga 0.85 N/GaN superlattices

J. K. Sheu*, Cheng-Huang Kuo, C. C. Chen, G. C. Chi, M. J. Jou

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Low resistivity Mg-doped Al 0.15 Ga 0.85 N/GaN strained-layer superlattices (SLs) were grown. In these SLs, the maximum hole concentration is 3 × 10 18 cm -3 at room temperature, i.e., larger than those for Mg-doped Al 0.15 Ga 0.85 N and GaN bulk layers with the same Cp 2 Mg flow rates during growth. Hall effect measurements indicate high conductivity of this structure in which the high activation efficiency is attributed to the strain-induced piezoelectric fields. In addition, photoluminescence measurements revealed a blue band at 2.9 eV in Mg-doped Al 0.15 Ga 0.85 N/GaN SLs, which could be attributed to a distant donor-to-acceptor transition feature. This work also fabricated InGaN/GaN blue light emitting diodes (LEDs) that consist of a Mg-doped Al 0.15 Ga 0.85 N/GaN SLs. Experimental results indicate that the LEDs can achieve a lower operation voltage of around 3 V, i.e., smaller than conventional devices which have an operation voltage of about 3.8 V.

Original languageEnglish
Pages (from-to)1665-1671
Number of pages7
JournalSolid-State Electronics
Volume45
Issue number9
DOIs
StatePublished - 1 Jan 2001

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