Characterization of the novel polysilicon TFT with a subgate coupling structure

Kow-Ming Chang; Yuan Hung Chung; Chi Gun Deng; Yuan Fu Chung; Jian Hong Lin

doi:10.1109/16.992863

Characterization of the novel polysilicon TFT with a subgate coupling structure

Kow-Ming Chang^*, Yuan Hung Chung, Chi Gun Deng, Yuan Fu Chung, Jian Hong Lin

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have proposed and fabricated a novel polysilicon thin film transistor (poly-Si TFT) with a snbgate coupling structure that behaves as an offset gated structure in the OFF state while acting as a conventional nonoffset structure in the ON state. The OFF state leakage current of the new TFT is two orders of magnitude lower than that of the conventional nonoffset TFT, while the ON current of the new TFT is one order of magnitude higher than that of the offset TFT and is almost identical to that of the conventional non-offset TFT. The ON/OFF current ratio of the new TFT is greatly improved by two orders of magnitude. No additional photo-masking steps are required to fabricate the subgate of the new TFT and its fabrication process is fully the same as the conventional nonoffset TFTs.

Original language	English
Pages (from-to)	564-567
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	4
DOIs	https://doi.org/10.1109/16.992863
State	Published - 1 Apr 2002

Keywords

Offset gated structure
ON/OFF current ratio
Photomasking steps
Polysilicon thin film transistor (poly-Si TFT)
Subgate coupling structure

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10.1109/16.992863

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abstract = "We have proposed and fabricated a novel polysilicon thin film transistor (poly-Si TFT) with a snbgate coupling structure that behaves as an offset gated structure in the OFF state while acting as a conventional nonoffset structure in the ON state. The OFF state leakage current of the new TFT is two orders of magnitude lower than that of the conventional nonoffset TFT, while the ON current of the new TFT is one order of magnitude higher than that of the offset TFT and is almost identical to that of the conventional non-offset TFT. The ON/OFF current ratio of the new TFT is greatly improved by two orders of magnitude. No additional photo-masking steps are required to fabricate the subgate of the new TFT and its fabrication process is fully the same as the conventional nonoffset TFTs.",

keywords = "Offset gated structure, ON/OFF current ratio, Photomasking steps, Polysilicon thin film transistor (poly-Si TFT), Subgate coupling structure",

author = "Kow-Ming Chang and Chung, {Yuan Hung} and Deng, {Chi Gun} and Chung, {Yuan Fu} and Lin, {Jian Hong}",

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AU - Lin, Jian Hong

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AB - We have proposed and fabricated a novel polysilicon thin film transistor (poly-Si TFT) with a snbgate coupling structure that behaves as an offset gated structure in the OFF state while acting as a conventional nonoffset structure in the ON state. The OFF state leakage current of the new TFT is two orders of magnitude lower than that of the conventional nonoffset TFT, while the ON current of the new TFT is one order of magnitude higher than that of the offset TFT and is almost identical to that of the conventional non-offset TFT. The ON/OFF current ratio of the new TFT is greatly improved by two orders of magnitude. No additional photo-masking steps are required to fabricate the subgate of the new TFT and its fabrication process is fully the same as the conventional nonoffset TFTs.

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