Characterization of the low temperature activated P+/N junction formed by implant into silicide method

Kow-Ming Chang*, Jian Hong Lin, Chih Hsiang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
StatePublished - 1 Dec 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: 12 Dec 200714 Dec 2007

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0714/12/07

Cite this