Characterization of the low temperature activated P+/N junction formed by implant into silicide method

Kow-Ming Chang; Jian Hong Lin; Chih Hsiang Yang

doi:10.1109/ISDRS.2007.4422558

Characterization of the low temperature activated P⁺/N junction formed by implant into silicide method

Kow-Ming Chang^*, Jian Hong Lin, Chih Hsiang Yang

^*Corresponding author for this work

National Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422558
State	Published - 1 Dec 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422558

Link to publication in Scopus

Cite this

@inproceedings{4d889545ea9e43ff8cf21ba70b54cddc,

title = "Characterization of the low temperature activated P+/N junction formed by implant into silicide method",

author = "Kow-Ming Chang and Lin, {Jian Hong} and Yang, {Chih Hsiang}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISDRS.2007.4422558",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "null ; Conference date: 12-12-2007 Through 14-12-2007",

}

Chang, K-M, Lin, JH & Yang, CH 2007, Characterization of the low temperature activated P⁺/N junction formed by implant into silicide method. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422558, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422558

Characterization of the low temperature activated P⁺/N junction formed by implant into silicide method. / Chang, Kow-Ming; Lin, Jian Hong; Yang, Chih Hsiang.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422558 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characterization of the low temperature activated P+/N junction formed by implant into silicide method

AU - Chang, Kow-Ming

AU - Lin, Jian Hong

AU - Yang, Chih Hsiang

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=44949230244&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422558

DO - 10.1109/ISDRS.2007.4422558

M3 - Conference contribution

AN - SCOPUS:44949230244

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -