Characterization of the low temperature activated N + /P junction formed by implant into silicide method

Kow-Ming Chang*, Jian Hong Lin, Chih Hsiang Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Shallow junction formation and low thermal budget control are important for advanced device manufacturing. Implant into silicide (IIS) method is a candidate to achieve both requirements. In this work we show that the high activation ability of the implant into nickel silicide method at low activated temperature is strongly related to the solid phase epitaxial regrowth (SPER) process. The SIMS, capacitance-voltage (C-V), four points probe (FPP), and current-voltage (I-V) measurements are combined to demonstrate that the SPER process of the IIS method is starting from the silicide/silicon (M/S) interface. The best N + /P interface is formed when SPER is complete. After SPER process finished, additional thermal budget may cause junction performance degradation at the temperature higher than 550 °C.

Original languageEnglish
Pages (from-to)6155-6157
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
StatePublished - 30 Jul 2008

Keywords

  • Implant into silicide
  • Nickel silicide
  • Rapid thermal anneal
  • Solid phase epitaxial regrowth

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