Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO 2 /Si 3 N 4 interfacial transition layer

Yung Yueh Chiu, Bo Jun Yang, Fu Hai Li, Ru Wei Chang, Wein Town Sun, Chun Yuan Lo, Chia Jung Hsu, Chao Wei Kuo, Shirota Riichiro

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Abstract

The role of SiO2/Si3N4 interfacial transition (IFT) layer in the oxide-nitride-oxide (ONO) tri-layer is quantitatively analyzed for the first time by simulating the temperature and stress-accelerated retention characteristics of p-channel silicon-oxide-nitride-oxide-silicon (SONOS) devices. The ONO tri-layer is modeled as an alloy-dielectric by changing the atomic concentration of silicon, oxygen and nitrogen. It is revealed that simulated results including the IFT layer are more consistent with the experimental data than those neglecting the IFT layer. In addition, the results show that the trapped charge density in IFT layer is two times larger than in the bulk Si3N4 film, due to the oxygen atoms penetrated from SiO2 cause the extrinsic defects in the IFT layer. The energy levels of the trapped charge are continuously distributed, and the peak value is >1.6 eV below the conduction band of the ONO tri-layer with a full width at half maximum of 0.45 eV.

Original languageEnglish
Article number104201
JournalJapanese Journal of Applied Physics
Volume54
Issue number10
DOIs
StatePublished - 1 Oct 2015

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