The use of SnTe as a source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. Hall carrier concentrations between 1.23×1016 and 3.7×1018 cm-3 have been obtained with room-temperature Hall mobility as high as 5114 cm2/V s for a lightly doped GaSb layer with nH = 3.8 × 1016 cm-3. The temperature-dependent Hall concentrations have been analyzed according to the two-band model to obtain information about the effect of the band structure of GaSb on the electrical properties. In addition, the effects of V-III flux ratio on Te incorporation in GaSb are studied. The measured carrier concentrations are found to be insensitive to the antimony-to-gallium beam equivalent pressures (from 1.5 to 9) at a growth temperature of 500°C. These results may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.