Characterization of SOA in time domain and the improvement techniques for using in high-voltage integrated circuits

Wen Yi Chen*, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

20 Scopus citations

Abstract

Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.

Original languageEnglish
Article number6151077
Pages (from-to)382-390
Number of pages9
JournalIEEE Transactions on Device and Materials Reliability
Volume12
Issue number2
DOIs
StatePublished - 14 Jun 2012

Keywords

  • Electrical safe operating area (SOA) (eSOA)
  • SOA
  • power MOSFETs
  • snapback
  • thermal SOA (tSOA)

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