Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction

C. H. Huang, Albert Chin*, W. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have characterized the Si/Si0.6Ge0.4 heterostructure formed by two-step solid-phase reaction. Single crystalline behavior evidenced by X-ray diffraction. In sharp contrast to conventional strain-relaxed SiGe, an extremely smooth surface close to the Si substrate is measured by cross-sectional transmission electron microscopy and atomic force microscopy. Good material quality is further evidenced from the near identical current-voltage characteristics for thermal oxide grown on Si/Si0.6Ge0.4 and on the Si control sample.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number3
DOIs
StatePublished - 1 Mar 2002

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