Characterization of silicided shallow n+p junctions formed by P+ implantation into thin Ti films on Si substrates

M. H. Juang*, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

High-quality silicided shallow n+p junctions have been fabricated by P+ implantation into thin Ti films on Si substrates and by moderate implant conditions as well as subsequent high-temperature rapid thermal annealing (RTA) followed by low-temperature conventional furnace annealing (CFA). RTA minimizes the diffusion of knock-on Ti but greatly reduces the drive-in efficiency because of its short annealing time. Driving the dopants out of silicides via long-time annealing was associated with the crystallinity of silicides. The junctions formed by this scheme with respect to various implant and anneal conditions have been characterized. In addition, the distribution profile of Ti penetration was correlated with the effective generation life time obtained from the reverse I-V curves.

Original languageEnglish
Pages (from-to)1535-1542
Number of pages8
JournalSolid State Electronics
Volume35
Issue number10
DOIs
StatePublished - 1 Jan 1992

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