Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy

K. P. Chang*, S. L. Yang, D. S. Chuu, R. S. Hsiao, Jenn-Fang Chen, L. Wei, J. S. Wang, J. Y. Chi

*Corresponding author for this work

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Abstract

The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14 Al0.86 As and In0.14 Ga0.86 As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs.

Original languageEnglish
Article number083511
JournalJournal of Applied Physics
Volume97
Issue number8
DOIs
StatePublished - 27 Apr 2005

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