Characterization of RF Noise in UTBB FD-SOI MOSFET

Pragya Kushwaha*, Avirup Dasgupta, Yogendra Sahu, Sourabh Khandelwal, Chen-Ming Hu, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.

Original languageEnglish
Article number7572129
Pages (from-to)379-386
Number of pages8
JournalIEEE Journal of the Electron Devices Society
Volume4
Issue number6
DOIs
StatePublished - 1 Nov 2016

Keywords

  • FDSOI
  • MOSFET
  • RF
  • Thermal noise
  • device modeling
  • electrical characterization
  • high frequency noise

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    Kushwaha, P., Dasgupta, A., Sahu, Y., Khandelwal, S., Hu, C-M., & Chauhan, Y. S. (2016). Characterization of RF Noise in UTBB FD-SOI MOSFET. IEEE Journal of the Electron Devices Society, 4(6), 379-386. [7572129]. https://doi.org/10.1109/JEDS.2016.2603181