Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

Shaw Hung Gu*, Ta-Hui Wang, Wen Pin Lu, Wenchi Ting, Yen Hui Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this paper, we use a modified charge pumping technique to characterize the programmed charge lateral distribution in a hot electron program/hot hole erase, two-bit storage nitride Flash memory cell. The stored charge distribution of each bit over the source/drain junctions can be profiled separately. Our result shows that the second programmed bit has a broader stored charge distribution than the first programmed bit. The reason is that a large channel field exists under the first programmed bit during the second bit programming. Such a large field accelerates channel electrons and causes earlier electron injection into the nitride. In addition, we find that programmed charges spread further into the channel as program/erase cycle number increases.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume53
Issue number1
DOIs
StatePublished - 1 Jan 2006

Keywords

  • Charge pumping (CP)
  • Cycling stress
  • Programmed charge distribution
  • Two-bit storage nitride Flash cell

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