Characterization of porous silicate for ultra-low k dielectric application

Po-Tsun Liu*, T. C. Chang, K. C. Hsu, Tseung-Yuen Tseng, L. M. Chen, C. J. Wang, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalThin Solid Films
Volume414
Issue number1
DOIs
StatePublished - 1 Jul 2002

Keywords

  • Dielectric constant
  • Porous silicate films
  • Thermal stability

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