Characterization of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin*, M. F. Wang, C. C. Chen, S. K. Hsien, Chao-Hsin Chien, T. Y. Huang, C. Y. Chang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalConference article

12 Scopus citations

Abstract

Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Qbd) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at room temperature and elevated temperature (180 °C) conditions. As the oxide thickness is thinned down below 3 nm, the Qbd becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that the negative plasma charging and high, process temperature are the key factors responsible for the damage.

Original languageEnglish
Pages (from-to)312-317
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1998
EventProceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA
Duration: 31 Mar 19982 Apr 1998

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