Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD

Chun-Hsiung Lin*, Hao-Chung Kuo, G. E. Stillman, Haydn Chen

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

Highly (100) textured pseudo-cubic Pb(ScTa)1-xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650°C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated. Furthermore, the pyroelectric properties of these thin films were estimated.

Original languageEnglish
Pages (from-to)679-684
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume541
StatePublished - 1 Jan 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 30 Nov 19983 Dec 1998

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