Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Yu Heng Liu, Cheng Min Jiang, Hsiao Yi Lin, Ta-Hui Wang, Wen Jer Tsai, Tao Cheng Lu, Kuang Chao Chen, Chih Yuan Lu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Original languageEnglish
Article number033501
JournalApplied Physics Letters
Volume111
Issue number3
DOIs
StatePublished - 17 Jul 2017

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