Characterization of MOS structures with ultra-thin tunneling oxynitride

H. Fujioka*, C. Wann, D. Park, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Characteristics of ultrathin silicon oxynitride (15-25 angstroms) and its interface with Si have been investigated. Oxynitride films with thickness down to 15 angstroms can be grown reproducibly in a conventional furnace. The leakage currents through these films can be well explained by the direct tunneling mechanism and can be fit by the same equation as that for pure oxide. This result indicates that incorporation of nitrogen atoms does not seriously affect the basic properties of the film and its interface such as the effective mass and the barrier height. A p-type poly gate MOS structure with 22 angstroms oxynitride has also been fabricated successfully without boron penetration even using BF2+ ion implantation and a conventional furnace. Since the leakage current thorough oxynitride with this thickness is acceptable for circuit operation, thickness of the gate insulator in the dual poly-Si process can be scaled down at least to 22 angstroms.

Original languageEnglish
Pages (from-to)333-338
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume405
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

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