Characterization of metal Schottky junction for In0.53Ga 0.47As substrates

R. Hosoi, Y. Suzuki, D. Zadeh, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The metal/InGaAs Schottky devices with Ni, TiN and Ni/Si (stacked) were fabricated. J-V and C-V characteristics were measured and Schottky barrier height (φBp) was calculated. It is shown that by using Ni/Si stacked structure a larger and more stable barrier height φBp can be achieved which is not affected by an annealing temperature up to 500°C.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2012, CSTIC 2012
Pages417-421
Number of pages5
Edition1
DOIs
StatePublished - 2012
EventChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
Duration: 18 Mar 201219 Mar 2012

Publication series

NameECS Transactions
Number1
Volume44
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2012, CSTIC 2012
CountryChina
CityShanghai
Period18/03/1219/03/12

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