The metal/InGaAs Schottky devices with Ni, TiN and Ni/Si (stacked) were fabricated. J-V and C-V characteristics were measured and Schottky barrier height (φBp) was calculated. It is shown that by using Ni/Si stacked structure a larger and more stable barrier height φBp can be achieved which is not affected by an annealing temperature up to 500°C.
|Title of host publication||China Semiconductor Technology International Conference 2012, CSTIC 2012|
|Number of pages||5|
|State||Published - 2012|
|Event||China Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China|
Duration: 18 Mar 2012 → 19 Mar 2012
|Conference||China Semiconductor Technology International Conference 2012, CSTIC 2012|
|Period||18/03/12 → 19/03/12|