Characterization of LOCOS field oxide on 4H-SiC formed by ar preamorphization ion implantation

Yuan Hung Tseng*, Chung Yu Lin, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this letter, the electrical properties of local oxidation of silicon (LOCOS) field oxide formed on 4H-SiC are reported. Moreover, unlike the conventional Si LOCOS process, a simpler method based on Ar preamorphization implantation is proposed. In addition to direct characterization of the field oxide, device properties achieved using LOCOS isolation are compared with those achieved using the conventional chemical vapor deposition oxide isolation to clarify the impact of isolation technology. The results of this letterwould be insightful for silicon-carbide-basedverylarge- scale integration technology.

Original languageEnglish
Article number7911276
Pages (from-to)798-801
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number6
DOIs
StatePublished - 1 Jun 2017

Keywords

  • Dielectric breakdown
  • high temperature
  • isolation technology
  • local oxidation of silicon (LOCOS)
  • silicon carbide.

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