Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence

Yu Kuang Liao*, Woei Tyng Lin, Dan Hua Hsieh, Shou Yi Kuo, Fang I. Lai, Yu Lun Chueh, Hao-Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar+ milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - 22 Nov 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 20 Aug 201223 Aug 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period20/08/1223/08/12

Keywords

  • CIGS
  • Nanotips
  • Photoluminescence
  • Saturation

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    Liao, Y. K., Lin, W. T., Hsieh, D. H., Kuo, S. Y., Lai, F. I., Chueh, Y. L., & Kuo, H-C. (2012). Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 [6322062] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2012.6322062