Characterization of junction dosage effect on NAND arrays with charge pumping method

Chienying Lee*, C. H. Lee, C. H. Cheng, L. H. Chong, K. F. Chen, Y. J. Chen, J. S. Huang, S. H. Ku, N. K. Zous, I. J. Huang, T. T. Han, M. S. Chen, W. P. Lu, K. C. Chen, Ta-Hui Wang, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Reliability issues including random telegraph noise (RTN) and program disturbance in floating gate (FG) NAND strings for different junction dosages are compared. Although the initial threshold voltage (VT) distributions are similar for various source/drain (S/D) dosages, these samples exhibit different amplitudes on read current fluctuation. This current noise will induce inaccuracy in sensing level and the read margin is reduced especially for multi-level cell (MLC) operation. Moreover, the junction profile has a strong impact on program disturbance. Contrary to the behavior of global self-boosting (GSB), the VT of disturbed bits show an abnormal tail distribution under high pass gate voltage (Vpass, pgm) when junction dosage is reduced. Charge pumping technique is utilized to explore the local VT distribution around junctions. Based on our characterization results, the hot-carrier injection should be responsible for this tail distribution.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages150-151
Number of pages2
DOIs
StatePublished - 11 Jul 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201127 Apr 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan
CityHsinchu
Period25/04/1127/04/11

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