Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement

Chunmeng Dou*, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Adopting the gated p-i-n diode configuration, the interface state density (Dit) at the Si/SiO2 interface of Si fin structures on Silicon-on-Insulator (SOI) wafers has been systematically studied using charge pumping method. The optimal forming gas annealing temperature for the three-dimensional (3D) surface is extracted. A new methodology for separately quantifying the local Dit at different regions of the 3D surfaces (i.e., the top/side walls and the corners) is also derived by characterizing the fins with various widths and the planar counterparts. The results validate the necessity to independently consider the corner regions, at which substantially high local Dit situates, and thus further clarify the origin of high Dit at 3D surfaces.

Original languageEnglish
Pages (from-to)725-729
Number of pages5
JournalMicroelectronics Reliability
Volume54
Issue number4
DOIs
StatePublished - Apr 2014

Fingerprint Dive into the research topics of 'Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement'. Together they form a unique fingerprint.

Cite this