High-density (3.0 × 1010 cm-2) InGaN/GaN multiple quantum well (MQW) nanorods were fabricated from an as-grown bulk light-emitting diode structure by inductively coupled plasma dry etching with self-assembled nickel metal nanomasks. The self-assembled nickel metal nanomasks were formed by rapid thermal annealing of a nickel metal film at 850°C for 1 min. The influence of the thicknesses of the Ni metal film on the dimensions and density of the nanorods was also investigated. The structural and optical properties of the InGaN/GaN MQW nanorods were established using field emission scanning electron microscopy, transmission electron microscopy and photoluminescence measurements. The diameters and heights of nanorods were estimated to be 60 to 100nm and more than 0.28μm, respectively. The peak emission wavelength of the nanorods showed a blue shift of 5.1 nm from that of the as-grown bulk. An enhancement by a factor of 5 in photoluminescence intensity of the nanorods compared with that of the as-grown bulk was observed. The blue shift is attributed to strain relaxation in the wells after dry etching, the quantum confinement effect, or a combination of the two, which results in the enhancement of emission intensity.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|State||Published - 1 Apr 2005|
- Gallium nitride (GaN)
- Inductively coupled plasma (ICP)