Characterization of hot-carrier effects in thin-film fully-depleted SOI MOSFETs

Z. J. Ma*, H. J. Wann, M. Chan, J. King, Y. C. Cheng, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Previous conflicting reports concerning fully-depleted SOI device hot electron reliability is partially due to misunderstanding over the maximum channel electric field (Em). Experimental results using SOI MOSFETs with body contacts indicate that Em is just a weak function of thin-film SOI thickness (Tsi) and Em can be significantly lower than in a bulk device with drain junction depth (Xj) comparable to Tsi. The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (IG) of studying Em in SOI device without body contacts. Both N- and P-MOSFETs can have better hot-carrier reliability than comparable bulk devices. Thin film SOI MOSFETs have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages52-56
Number of pages5
ISBN (Print)0780313577
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 32nd Annual International Reliability Physics Proceedings - San Jose, CA, USA
Duration: 12 Apr 199414 Apr 1994

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 32nd Annual International Reliability Physics Proceedings
CitySan Jose, CA, USA
Period12/04/9414/04/94

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    Ma, Z. J., Wann, H. J., Chan, M., King, J., Cheng, Y. C., Ko, P. K., & Hu, C-M. (1994). Characterization of hot-carrier effects in thin-film fully-depleted SOI MOSFETs. In Annual Proceedings - Reliability Physics (Symposium) (pp. 52-56). (Annual Proceedings - Reliability Physics (Symposium)). Publ by IEEE. https://doi.org/10.1109/RELPHY.1994.307857