Highly textured PbZr x Ti 1-x O 3 (PZT) thin films with x = 0-0.6 were grown on LaNiO 3 coated Si substrates at 600°C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1 Jan 1998|
|Event||Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA|
Duration: 30 Nov 1997 → 4 Dec 1997