Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD

Chun-Hsiung Lin*, B. M. Yen, Haydn Chen, T. B. Wu, Hao-Chung Kuo, G. E. Stillman

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Highly textured PbZr x Ti 1-x O 3 (PZT) thin films with x = 0-0.6 were grown on LaNiO 3 coated Si substrates at 600°C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Original languageEnglish
Pages (from-to)189-194
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1 Jan 1998
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: 30 Nov 19974 Dec 1997

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