Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering

D. S. Wuu*, M. L. Lee, T. Y. Lin, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The material properties of sputtered HfB2 thin films ( ≈0.1 μm) are studied to better understand their behavior when used in ink-jet printing devices. The deposition conditions (i.e., working pressure, r.f. power, and heater temperature) were found to have large effects on the resistivity and stress of the film. The resistivity results obtained for HfB2 could mainly be attributed to the grain size effects. The stress built in during deposition was confirmed to be the primary stress component for the as-deposited heater film. In addition, the stress variation in the HfB2 sample during the thermal cycling was investigated. Under proper sputtering conditions, the HfB2 stress can be repeatedly controlled from tension ( +3×109 dyne cm-2, 100 °C) to compression ( -3.5×109 dyne cm-2, 400 °C). This trend is quite useful and can be utilized to minimize the heater stress during ink-jet device operation.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalMaterials Chemistry and Physics
Volume45
Issue number2
DOIs
StatePublished - 1 Jan 1996

Keywords

  • Hafnium diboride
  • Ink-jet printing devices
  • R.f. magnetron sputtering
  • Thin film resistors

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