Abstract
GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.
| Original language | English |
|---|---|
| Pages (from-to) | 1715-1718 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 3 |
| State | Published - 1 Jan 1998 |
| Event | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 7 Jun 1998 → 12 Jun 1998 |
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Meng, C-C., & Liao, G. R. (1998). Characterization of GaInP avalanche transit time device in millimeter-wave frequencies. IEEE MTT-S International Microwave Symposium Digest, 3, 1715-1718.