Characterization of GaInP avalanche transit time device in millimeter-wave frequencies

Chin-Chun Meng; G. R. Liao

Characterization of GaInP avalanche transit time device in millimeter-wave frequencies

Chin-Chun Meng^*, G. R. Liao

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.

Original language	English
Pages (from-to)	1715-1718
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
State	Published - 1 Jan 1998
Event	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 7 Jun 1998 → 12 Jun 1998

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title = "Characterization of GaInP avalanche transit time device in millimeter-wave frequencies",

abstract = "GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.",

author = "Chin-Chun Meng and Liao, {G. R.}",

year = "1998",

month = jan,

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language = "English",

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pages = "1715--1718",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 07-06-1998 Through 12-06-1998",

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TY - JOUR

T1 - Characterization of GaInP avalanche transit time device in millimeter-wave frequencies

AU - Meng, Chin-Chun

AU - Liao, G. R.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.

AB - GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.

UR - http://www.scopus.com/inward/record.url?scp=0031632856&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031632856

VL - 3

SP - 1715

EP - 1718

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

Y2 - 7 June 1998 through 12 June 1998

ER -

Characterization of GaInP avalanche transit time device in millimeter-wave frequencies

Abstract

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