Characterization of doped Bi4Ge3O12 single crystals by light-induced absorption, electrical and photoelectrical measurements

D. Petrova, V. Marinova*, R. C. Liu, Shiuan-Huei Lin, Ken-Yuh Hsu

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Measurement of light-induced absorption changes, dark- and photoconductivity have been performed on Bi4Ge3O 12 crystals doped with Fe, Rh and Fe+Rh. All samples exhibited a strong photochromic effect at room temperature, which was fully reversible after thermal annealing. It was found that Rh-doped Bi4Ge 3O12 crystals possess a lower dark conductivity (σd = 5.2×10-14 (Ωcm)-1) at room temperature in comparison with other investigated samples. New centers in the Bi4Ge3O12 inter-band structure, with thermal activation energies between 0.25 and 0.37 eV, have been created by doping with Fe and Rh. Fe-doped and Fe+Rh co-doped samples showed a non-linear photoconductivity dependence on light intensity, under illumination with a 514-nm laser.

Original languageEnglish
Pages (from-to)282-285
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Volume9
Issue number2
StatePublished - 1 Feb 2007

Keywords

  • Electrical properties
  • Photochromic effect
  • Photoelectrical properties
  • Single BiGeO crystals

Fingerprint Dive into the research topics of 'Characterization of doped Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub> single crystals by light-induced absorption, electrical and photoelectrical measurements'. Together they form a unique fingerprint.

  • Cite this