Characterization of CVD TixCyNz films deposited as diffusion barriers for Cu on low-k dielectrics methylsilsequiazane

W. C. Gau*, Po-Tsun Liu, T. C. Chang, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Metal organic chemical vapor deposition (MOCVD) TixCyNz films were deposited by using tetrakis-dimethylamino-titanium (TDMAT) and NH3 as a reaction gas at temperatures from 325 to 400°C with multi-layer Ar/NH3 plasma treatment. Effects of annealing and Ar/NH3 plasma treatment on the microstructure, composition, and electrical properties of TixCyNz films were studied. By multi-layers plasma treatment, the resistivity of TixCyNz barriers decreased from 960 to 548 μΩ-cm and the concentration of oxygen in barrier films are also decreased. The integration of the TixCyNz with low-k methylsilsesquiazane (MSZ) was investigated through Cu/CVD-TixCyNz/SiO2 and Cu/ CVD-TixCyNz/MSZ capacitors after being annealed in furnace at temperatures from 500 to 800°C. With thermal annealing in N2 ambient for 30 min, Cu/CVD-TixCyNz/MSZ structure remains metallurgically stable up to 700°C.

Original languageEnglish
Pages (from-to)439-444
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume766
StatePublished - 1 Dec 2003
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States
Duration: 21 Apr 200325 Apr 2003

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