Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique

Ming Hao Kuo, Ho Chane Chen, Wei Ting Lai, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrated a novel CMOS approach for the fabrication of high-performance Ge quantum dot (QD) MOSFETs offering great promises as optical switches and transducers for Si-based optical interconnects. Measured photocurrent to dark current ratio (Iph/Idark) and photoresponsivities from the Ge QD PT were as high as 272,000 and 1.7 A/W, respectively, under incident power of 20 μW at 980 nm illumination. Carrier dynamics in Ge QDs were characterized by applying a depleting voltage pulse to the gate of MOSFET and by time-resolved photoluminescence on Ge QD array.

Original languageEnglish
Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485389
StatePublished - 24 Sep 2015
EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
Duration: 14 Jun 201515 Jun 2015

Publication series

Name2015 Silicon Nanoelectronics Workshop, SNW 2015

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2015
CountryJapan
CityKyoto
Period14/06/1515/06/15

Keywords

  • Current measurement
  • Lighting
  • Logic gates
  • MOSFET
  • Oxidation
  • Silicon
  • Substrates

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