Characterization of C F4 -plasma fluorinated Hf O2 gate dielectrics with TaN metal gate

Chao Sung Lai*, Woei Cherng Wu, Jer Chyi Wang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

In this paper, fluorine incorporation into the Hf O2 gate dielectrics by post C F4 plasma treatment was proposed to improve the electrical characterization. TaN-Hf O2 -p-Si capacitors were demonstrated in this work. The characteristics of fluorinated Hf O2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the Hf O2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra.

Original languageEnglish
Article number222905
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number22
DOIs
StatePublished - 4 Jul 2005

Fingerprint Dive into the research topics of 'Characterization of C F<sub>4</sub> -plasma fluorinated Hf O<sub>2</sub> gate dielectrics with TaN metal gate'. Together they form a unique fingerprint.

Cite this