Characterization of (Ba,Sr)TiO3 thin-film capacitors with Ir bottom electrodes and its improvement by plasma treatment

Dong Sing Wuu*, Ray-Hua Horng, Chin Ching Lin, Yan Hong Liu

*Corresponding author for this work

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

(Ba, Sr)TiO3 (BST) thin-film capacitors with Ir bottom electrodes are recognized to have higher polarization and leakage current as compared to those with conventional Pt electrodes. This paper describes a method to improve the leakage current of BST/Ir films by high-density plasma surface treatment using O2·N2O or NH3 gas in an inductively coupled plasma system. It is found that the leakage current density can be reduced by two orders of magnitude using O2 plasma treatment. The dielectric constants were very closely to the reference sample except for NH3 plasma treated sample. The O2 and N2O plasma can enhance the lifetime than 10 years at 1.2 V for the Pt/(Ba,Sr)TiO3/Ir capacitors. It is necessary to trade off the capacitance property for leakage current property.

Original languageEnglish
Pages (from-to)600-607
Number of pages8
JournalMicroelectronic Engineering
Volume66
Issue number1-4
DOIs
StatePublished - 1 Apr 2003
EventIUMRS-ICEM 2002 - Xi an, China
Duration: 10 Jun 200214 Jun 2002

Keywords

  • (Ba
  • Capacitor
  • High dielectric constant
  • Ir
  • Leakage current
  • Plasma materials - processing applications
  • Sr)TiO

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