Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films

Chia Liang Sun, Hong Wen Wang*, Ming Chu Chang, Meng Suan Lin, San-Yuan Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

BaPbO3 and Ba(Pb1-xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq-1 (resistivity ≈ 1.07 × 10-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq-1 at x = 0.3.

Original languageEnglish
Pages (from-to)507-511
Number of pages5
JournalMaterials Chemistry and Physics
Volume78
Issue number2
DOIs
StatePublished - 17 Feb 2003

Keywords

  • Barium metaplumbate
  • Metal-organic deposition
  • Resistivity
  • Thin films

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