Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

C. W. Liang, T. C. Luo, M. S. Feng*, Huang-Chung Cheng, David Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Al2O3/SiNx double-layered dielectric films suitable for large-size amorphous silicon thin film transistor liquid crystal displays (a-Si:H TFT LCD) have been prepared by anodization and plasma enhanced chemical vapor deposition (PECVD). Al2O3 films were formed at various pH values and volume ratio of water (H2O%) in the electrolyte. The optimal quality of Al2O3 film was achieved at pH = 6 and H2O% = 30. These high-quality Al2O3 films have denser structure, lower etching rate (90 Å min-1) and smooth surface morphology after etching. The capacitors made of the anodization show a breakdown field as high as 7.8 MV cm-1 and a low leakage current density of 10 nA cm-2 at a dielectric field of 3 MV cm-1. Furthermore, a-Si:H TFTs with Al gate and different gate dielectrics (Al2O3/SiNx and SiNx) were also fabricated and evaluated. The TFTs with Al2O3/SiNx double-layered gate dielectric provide better performances, such as the smaller threshold voltage (1.76 V), improved subthreshold swing (1.0 V dec-1), and lower off-current (3.8 PA) than those of the device with single SiNx. film.

Original languageEnglish
Pages (from-to)166-172
Number of pages7
JournalMaterials Chemistry and Physics
Volume43
Issue number2
DOIs
StatePublished - 1 Jan 1996

Keywords

  • AlO
  • Amorphous silicon
  • Anodization
  • Thin film transistor

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