Characterization of annular-structure RF LDMOS transistors using polyharmonic distortion model

Chia Sung Chiu*, Kun Ming Chen, Guo Wei Huang, Chih Hua Hsiao, Kuo Hsiang Liao, Wen Lin Chen, Sheng Chiun Wang, Ming Yi Chen, Yu Chi Yang, Kai Li Wang, Lin-Kun Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

An annular-structure lateral-diffused metal-oxide semiconductor (LDMOS) RF transistor with polyharmonic distortion (PHD) model characterized by nonlinear vector network analyzer is described in this paper. The devices were fabricated using a 0.5 μm LDMOS process. The DC, small-signal, and large-signal characteristics of RF LDMOS transistors with annular-structures were also studied in this work. Using the PHD model, the accuracy of intermodulation and time waveform is verified. Furthermore, the model via X-parameter shows good agreement without optimization.

Original languageEnglish
Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages977-980
Number of pages4
DOIs
StatePublished - 1 Dec 2009
Event2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
Duration: 7 Jun 200912 Jun 2009

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2009 IEEE MTT-S International Microwave Symposium, IMS 2009
CountryUnited States
CityBoston, MA
Period7/06/0912/06/09

Keywords

  • LDMOS
  • Load-pull
  • Nonlinear
  • Polyharmonic distortion model
  • X-parameters

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