Characterization of Al2O3/ZnO grown on Si substrate by plasma enhanced atomic layer deposition

Chen Chen Chung; Binh Tinh Tran; Kung Liang Lin; Ching Chiun Wang; Chien Chih Chen; Chih Yung Huang; Sheng Lang Lee; Edward Yi Chang

doi:10.1149/05048.0005ecst

Characterization of Al₂O₃/ZnO grown on Si substrate by plasma enhanced atomic layer deposition

Chen Chen Chung, Binh Tinh Tran, Kung Liang Lin, Ching Chiun Wang, Chien Chih Chen, Chih Yung Huang, Sheng Lang Lee, Edward Yi Chang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Characterization of nanolaminate Al₂O₃/ZnO oxide films grown on Si substrates was conducted by using plasma enhanced atomic layer deposition (PE-ALD) method. PE-ALD can minimize the structural imperfections in films and reduce substrate damage. The film deposition by using PE-ALD are dense, defect-free, highly uniform, conformal films and show excellent step coverage. Moreover, compared to other deposition techniques, it is possible to deposit high quality films at much lower temperatures. High resolution transmission electron microscope (TEM) images showed the existence of sharp interfacial layers among the Al₂O₃, ZnO layer, and the Si substrate for the growth rate of 1.56 Å/cycle, and the surface roughness of about 0.2 nm. The nanolaminate-stacking layer can be used in organic light emitting diode encapsulation application as the gas barrier.

Original language	English
Pages (from-to)	5-8
Number of pages	4
Journal	ECS Transactions
Volume	50
Issue number	48
DOIs	https://doi.org/10.1149/05048.0005ecst
State	Published - 1 Dec 2012

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title = "Characterization of Al2O3/ZnO grown on Si substrate by plasma enhanced atomic layer deposition",

abstract = "Characterization of nanolaminate Al2O3/ZnO oxide films grown on Si substrates was conducted by using plasma enhanced atomic layer deposition (PE-ALD) method. PE-ALD can minimize the structural imperfections in films and reduce substrate damage. The film deposition by using PE-ALD are dense, defect-free, highly uniform, conformal films and show excellent step coverage. Moreover, compared to other deposition techniques, it is possible to deposit high quality films at much lower temperatures. High resolution transmission electron microscope (TEM) images showed the existence of sharp interfacial layers among the Al2O3, ZnO layer, and the Si substrate for the growth rate of 1.56 {\AA}/cycle, and the surface roughness of about 0.2 nm. The nanolaminate-stacking layer can be used in organic light emitting diode encapsulation application as the gas barrier.",

author = "Chung, {Chen Chen} and Tran, {Binh Tinh} and Lin, {Kung Liang} and Wang, {Ching Chiun} and Chen, {Chien Chih} and Huang, {Chih Yung} and Lee, {Sheng Lang} and Chang, {Edward Yi}",

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doi = "10.1149/05048.0005ecst",

language = "English",

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T1 - Characterization of Al2O3/ZnO grown on Si substrate by plasma enhanced atomic layer deposition

AU - Chung, Chen Chen

AU - Tran, Binh Tinh

AU - Lin, Kung Liang

AU - Wang, Ching Chiun

AU - Chen, Chien Chih

AU - Huang, Chih Yung

AU - Lee, Sheng Lang

AU - Chang, Edward Yi

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Characterization of nanolaminate Al2O3/ZnO oxide films grown on Si substrates was conducted by using plasma enhanced atomic layer deposition (PE-ALD) method. PE-ALD can minimize the structural imperfections in films and reduce substrate damage. The film deposition by using PE-ALD are dense, defect-free, highly uniform, conformal films and show excellent step coverage. Moreover, compared to other deposition techniques, it is possible to deposit high quality films at much lower temperatures. High resolution transmission electron microscope (TEM) images showed the existence of sharp interfacial layers among the Al2O3, ZnO layer, and the Si substrate for the growth rate of 1.56 Å/cycle, and the surface roughness of about 0.2 nm. The nanolaminate-stacking layer can be used in organic light emitting diode encapsulation application as the gas barrier.

AB - Characterization of nanolaminate Al2O3/ZnO oxide films grown on Si substrates was conducted by using plasma enhanced atomic layer deposition (PE-ALD) method. PE-ALD can minimize the structural imperfections in films and reduce substrate damage. The film deposition by using PE-ALD are dense, defect-free, highly uniform, conformal films and show excellent step coverage. Moreover, compared to other deposition techniques, it is possible to deposit high quality films at much lower temperatures. High resolution transmission electron microscope (TEM) images showed the existence of sharp interfacial layers among the Al2O3, ZnO layer, and the Si substrate for the growth rate of 1.56 Å/cycle, and the surface roughness of about 0.2 nm. The nanolaminate-stacking layer can be used in organic light emitting diode encapsulation application as the gas barrier.

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Characterization of Al2O3/ZnO grown on Si substrate by plasma enhanced atomic layer deposition

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Characterization of Al₂O₃/ZnO grown on Si substrate by plasma enhanced atomic layer deposition