Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth

Shih Chun Ling, Shih Pang Chang, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have demonstrated nanorod lateral overgrowth to reduce dislocation density in a-plane GaN. Subsequently, we grow green a-plane light-emitting diodes using nanorod lateral overgrowth. Output power of 0.5 mW was measured at 20 mA.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
DOIs
StatePublished - 1 Dec 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: 16 May 201021 May 2010

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period16/05/1021/05/10

Fingerprint Dive into the research topics of 'Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth'. Together they form a unique fingerprint.

Cite this