Characterization of a high-quality and UV-transparent PECVD silicon nitride film for nonvolatile memory applications

C. K. Wang*, T. L. Ying, C. S. Wei, L. M. Liu, Huang-Chung Cheng, M. S. Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A high quality and UV-transparent plasma enhanced chemical vapor deposition (PECVD) silicon nitride film is well developed to form a passivation layer for non-volatile memory devices. The dependence of the film properties on process parameters has been studied by factorial designed experiments. The deposition rate, uniformity, stress, refractive index, wet etching rate, density, step coverage, and UV-transmittance are the items used to evaluate the film properties. Rutherford backside scattering (RBS) and hydrogen forward scattering (HFS) are used to measure the film composition and total hydrogen composition, respectively. Compared to the traditional PECVD nitride (PE-SiN) film known to have tensile stress and opacity to ultra-violet light (UV light), the developed PE-SiN film with very low compressive stress (< 1E9 dynes/cm*2) and excellent UV-transmittance (> 70% for 1.6 μm- thick film) can be achieved. The developed film has higher density, lower hydrogen content, and high N/Si inside film. Based on RBS/HFS, UV-transmittance and Fourier transform infrared spectrum (FTIR) results, the material and optical properties of the developed PE-SiN film are well investigated. This developed PE-SiN film is successfully applied to EPROM devices, and very good electrical and reliability performances have been demonstrated.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsFusen E. Chen, Shyam P. Murarka
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages282-290
Number of pages9
ISBN (Print)0819416681
DOIs
StatePublished - 1 Dec 1994
EventMicroelectronics Technology and Process Integration - Austin, TX, USA
Duration: 20 Oct 199421 Oct 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2335
ISSN (Print)0277-786X

Conference

ConferenceMicroelectronics Technology and Process Integration
CityAustin, TX, USA
Period20/10/9421/10/94

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    Wang, C. K., Ying, T. L., Wei, C. S., Liu, L. M., Cheng, H-C., & Lin, M. S. (1994). Characterization of a high-quality and UV-transparent PECVD silicon nitride film for nonvolatile memory applications. In F. E. Chen, & S. P. Murarka (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 282-290). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2335). Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.186067