Characterization of 850nm AlGaAs/GaAs implant vertical cavity emitting lasers utilizing silicon implantation induced disordering

Hao-Chung Kuo, W. C. Shu, Ya Hsien Chang, Fang I. Lai, Li Hung Lai, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we report a novel implant VCSELs utilizing silicon implantation induced disordering. This VCSELs exhibit kink-free current-light output performance with threshold currents ∼2.2 mA, and the slope efficiencies ∼0.45 W/A. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)0780377664
DOIs
StatePublished - 1 Jan 2003
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 200319 Dec 2003

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
CountryTaiwan
CityTaipei
Period15/12/0319/12/03

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