Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices

Chin-Chun Meng*, H. R. Fetterman, D. Streit, T. Block, Y. Saito

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

MQW structures have been proposed to enhance the nonlinearity of the avalanche process and reduce the ionization rate saturation limitations in GaAs. The dramatic reduction of the nonlinearity of the avalanche process for conventional GaAs IMPATT devices causes the fall-off in efficiency at high frequencies. The authors have successfully achieved both pulsed and CW operation of MQW (multiquantum well) IMPATT oscillators at W-band frequencies. Preliminary results yield, in a nonoptimized circuit, 127 mW (2.2% in efficiency) pulsed operation at 94 GHz for 480 mA bias current and 1.1 mW CW power at 103.8 GHz for 320 mA bias current. The pulse width is 200 ns and duty circle is 0.02% for pulsed testing.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages95-96
Number of pages2
ISBN (Print)0819411639
DOIs
StatePublished - 1 Dec 1992
EventProceedings of the 17th International Conference on Infrared and Millimeter Waves - Pasadena, CA, USA
Duration: 14 Dec 199217 Dec 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1929
ISSN (Print)0277-786X

Conference

ConferenceProceedings of the 17th International Conference on Infrared and Millimeter Waves
CityPasadena, CA, USA
Period14/12/9217/12/92

Fingerprint Dive into the research topics of 'Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices'. Together they form a unique fingerprint.

Cite this