Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices

Chin-Chun Meng; H. R. Fetterman; D. Streit; T. Block; Y. Saito

doi:10.1117/12.2298167

Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices

Chin-Chun Meng^*, H. R. Fetterman, D. Streit, T. Block, Y. Saito

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

MQW structures have been proposed to enhance the nonlinearity of the avalanche process and reduce the ionization rate saturation limitations in GaAs. The dramatic reduction of the nonlinearity of the avalanche process for conventional GaAs IMPATT devices causes the fall-off in efficiency at high frequencies. The authors have successfully achieved both pulsed and CW operation of MQW (multiquantum well) IMPATT oscillators at W-band frequencies. Preliminary results yield, in a nonoptimized circuit, 127 mW (2.2% in efficiency) pulsed operation at 94 GHz for 480 mA bias current and 1.1 mW CW power at 103.8 GHz for 320 mA bias current. The pulse width is 200 ns and duty circle is 0.02% for pulsed testing.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Society of Photo-Optical Instrumentation Engineers
Pages	95-96
Number of pages	2
ISBN (Print)	0819411639
DOIs	https://doi.org/10.1117/12.2298167
State	Published - 1 Dec 1992
Event	Proceedings of the 17th International Conference on Infrared and Millimeter Waves - Pasadena, CA, USA Duration: 14 Dec 1992 → 17 Dec 1992

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1929
ISSN (Print)	0277-786X

Conference

Conference	Proceedings of the 17th International Conference on Infrared and Millimeter Waves
City	Pasadena, CA, USA
Period	14/12/92 → 17/12/92

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10.1117/12.2298167

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Meng, C-C., Fetterman, H. R., Streit, D., Block, T., & Saito, Y. (1992). Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 95-96). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1929). Publ by Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.2298167

Meng, Chin-Chun ; Fetterman, H. R. ; Streit, D. ; Block, T. ; Saito, Y. / Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices. Proceedings of SPIE - The International Society for Optical Engineering. Publ by Society of Photo-Optical Instrumentation Engineers, 1992. pp. 95-96 (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices",

abstract = "MQW structures have been proposed to enhance the nonlinearity of the avalanche process and reduce the ionization rate saturation limitations in GaAs. The dramatic reduction of the nonlinearity of the avalanche process for conventional GaAs IMPATT devices causes the fall-off in efficiency at high frequencies. The authors have successfully achieved both pulsed and CW operation of MQW (multiquantum well) IMPATT oscillators at W-band frequencies. Preliminary results yield, in a nonoptimized circuit, 127 mW (2.2% in efficiency) pulsed operation at 94 GHz for 480 mA bias current and 1.1 mW CW power at 103.8 GHz for 320 mA bias current. The pulse width is 200 ns and duty circle is 0.02% for pulsed testing.",

author = "Chin-Chun Meng and Fetterman, {H. R.} and D. Streit and T. Block and Y. Saito",

year = "1992",

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language = "English",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",

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note = "null ; Conference date: 14-12-1992 Through 17-12-1992",

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Meng, C-C, Fetterman, HR, Streit, D, Block, T & Saito, Y 1992, Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1929, Publ by Society of Photo-Optical Instrumentation Engineers, pp. 95-96, Proceedings of the 17th International Conference on Infrared and Millimeter Waves, Pasadena, CA, USA, 14/12/92. https://doi.org/10.1117/12.2298167

Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices. / Meng, Chin-Chun; Fetterman, H. R.; Streit, D.; Block, T.; Saito, Y.

Proceedings of SPIE - The International Society for Optical Engineering. Publ by Society of Photo-Optical Instrumentation Engineers, 1992. p. 95-96 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1929).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - MQW structures have been proposed to enhance the nonlinearity of the avalanche process and reduce the ionization rate saturation limitations in GaAs. The dramatic reduction of the nonlinearity of the avalanche process for conventional GaAs IMPATT devices causes the fall-off in efficiency at high frequencies. The authors have successfully achieved both pulsed and CW operation of MQW (multiquantum well) IMPATT oscillators at W-band frequencies. Preliminary results yield, in a nonoptimized circuit, 127 mW (2.2% in efficiency) pulsed operation at 94 GHz for 480 mA bias current and 1.1 mW CW power at 103.8 GHz for 320 mA bias current. The pulse width is 200 ns and duty circle is 0.02% for pulsed testing.

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Meng C-C, Fetterman HR, Streit D, Block T, Saito Y. Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit time devices. In Proceedings of SPIE - The International Society for Optical Engineering. Publ by Society of Photo-Optical Instrumentation Engineers. 1992. p. 95-96. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2298167