Characterization of β-Ga2O3 Schottky barrier diodes

T. Kaneko, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Depth profile of deep level defect density in a ß-Ga2O3 epitaxial layer grown on a bulk wafer has been extracted. Through capacitance measurements of a ß-Ga2O3 Schottky barrier diode (SBD) at reverse bias condition, the defect level and its concentration have been extracted. A defect level of 0.8 eV from conduction band of β-Ga2O3 with a concentration as high as 1016 cm-3 has been extracted. Based on published database, the level can be assigned to dominant defect.

Original languageEnglish
Title of host publication2018 18th International Workshop on Junction Technology, IWJT 2018
EditorsGuo-Ping Ru, Bing-Zong Li, Yu-Long Jiang, Xin-Ping Qu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781538645116
DOIs
StatePublished - 2 Apr 2018
Event18th International Workshop on Junction Technology, IWJT 2018 - Shanghai, China
Duration: 8 Mar 20189 Mar 2018

Publication series

Name2018 18th International Workshop on Junction Technology, IWJT 2018
Volume2018-January

Conference

Conference18th International Workshop on Junction Technology, IWJT 2018
CountryChina
CityShanghai
Period8/03/189/03/18

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