Characterization and thermal analysis of packaged AlGaN/GaN power HEMT

Stone Cheng*, Chi Ying Li, Chia Hung Liu, Po Chien Chou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

AlGaN/GaN high electron mobility transistor (HEMT) has many attractive material properties, such as high breakdown field, wide bandgap, and high thermal stability, which make it suitable for power electronic applications. This work presents thermal resistance constitution evaluation and experiments for packaged AlGaN/GaN HEMT. The investigation of thermal resistance is based on the closed-form expression heat transfer model which assumed that the device is viewed as a two-layer with a long and thin heat source on the top and an isothermal base at the bottom. The AlGaN/GaN device is divided into three distinct regions. Region I is contained in the GaN buffer layer. Regions II and III are contained in the substrate material. The thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 700 m Si substrate are 11.99 K/W and 122.43 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of AlGaN/GaN HEMTs. The validity of module is verified by comparing it with experimental observations. IR thermography microscope is utilized to measure the temperature of the active region with different driving conditions. The simulation process is calibrated against measurement data of a real device and delivers good predictive results for the DC characteristics.

Original languageEnglish
Title of host publication2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011
Pages195-197
Number of pages3
DOIs
StatePublished - 1 Dec 2011
Event2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011 - Taipei, Taiwan
Duration: 18 Oct 201121 Oct 2011

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2011
CountryTaiwan
CityTaipei
Period18/10/1121/10/11

Keywords

  • AlGaN/GaN HEMT
  • IR thermography microscope
  • Package
  • Thermal analysis

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