Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.
|Number of pages||4|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 1995|
|Event||Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA|
Duration: 4 Apr 1995 → 6 Apr 1995