Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROM's

Chimoon Huang; Ta-Hui Wang; T. Chen; N. C. Peng; A. Chang; F. C. Shone

doi:10.1109/RELPHY.1995.513655

Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROM's

Chimoon Huang^*, Ta-Hui Wang, T. Chen, N. C. Peng, A. Chang, F. C. Shone

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.

Original language	English
Pages (from-to)	61-64
Number of pages	4
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/RELPHY.1995.513655
State	Published - 1 Jan 1995
Event	Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 4 Apr 1995 → 6 Apr 1995

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10.1109/RELPHY.1995.513655

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title = "Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROM's",

abstract = "Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.",

author = "Chimoon Huang and Ta-Hui Wang and T. Chen and Peng, {N. C.} and A. Chang and Shone, {F. C.}",

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AU - Huang, Chimoon

AU - Wang, Ta-Hui

AU - Chen, T.

AU - Peng, N. C.

AU - Chang, A.

AU - Shone, F. C.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.

AB - Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.

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U2 - 10.1109/RELPHY.1995.513655

DO - 10.1109/RELPHY.1995.513655

M3 - Conference article

AN - SCOPUS:0029238175

SP - 61

EP - 64

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

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