Abstract
Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.
| Original language | English |
|---|---|
| Pages (from-to) | 61-64 |
| Number of pages | 4 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| DOIs | |
| State | Published - 1 Jan 1995 |
| Event | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 4 Apr 1995 → 6 Apr 1995 |
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Huang, C., Wang, T-H., Chen, T., Peng, N. C., Chang, A., & Shone, F. C. (1995). Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROM's. Annual Proceedings - Reliability Physics (Symposium), 61-64. https://doi.org/10.1109/RELPHY.1995.513655