Abstract
Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.
Original language | English |
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Pages (from-to) | 61-64 |
Number of pages | 4 |
Journal | Annual Proceedings - Reliability Physics (Symposium) |
DOIs | |
State | Published - 1 Jan 1995 |
Event | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 4 Apr 1995 → 6 Apr 1995 |