Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROM's

Chimoon Huang*, Ta-Hui Wang, T. Chen, N. C. Peng, A. Chang, F. C. Shone

*Corresponding author for this work

Research output: Contribution to journalConference article

10 Scopus citations

Abstract

Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant erasing mechanism in certain device structures.

Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1995
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 4 Apr 19956 Apr 1995

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