Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node

Pragya Kushwaha*, Harshit Agarwal, Yen Kai Lin, Avirup Dasgupta, Ming Yen Kao, Ye Lu, Yun Yue, Xiaonan Chen, Joseph Wang, Wing Sy, Frank Yang, P. R.Chidi Chidambaram, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


1/f noise is characterized on thick and thin-gate oxide-based FinFETs for different channel lengths. The devices exhibit gate bias dependence in 1/ {f} noise even in the weak-inversion region of operation which cannot be explained by the existing flicker noise model. We attribute this phenomenon to the non-uniform oxide-trap distribution in energy or space. Based on our characterization results for n- and p-channel FinFETs, we have improved the BSIM-CMG industry standard compact model for the FinFETs. The improved model is able to capture the 1/f noise behavior over a wide range of biases, channel lengths, fin numbers, and number of fingers.

Original languageEnglish
Article number8692435
Pages (from-to)985-988
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
StatePublished - 1 Jun 2019


  • FinFET
  • compact model
  • flicker noise

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