Reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. Measured temperature dependence of antifuse resistance is for the first time used to derive key physical parameters in the model.
|Number of pages||9|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA|
Duration: 8 Apr 1997 → 10 Apr 1997