Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays

Chih Ching Shih*, Roy Lambertson, Frank Hawley, Farid Issaq, John McCollum, Esmat Hamdy, Hiroshi Sakurai, Hiroshi Yuasa, Hirotsugu Honda, Tohru Yamaoka, Tetsuaki Wada, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

Reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. Measured temperature dependence of antifuse resistance is for the first time used to derive key physical parameters in the model.

Original languageEnglish
Article number5665186
Pages (from-to)25-33
Number of pages9
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA
Duration: 8 Apr 199710 Apr 1997

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