In this paper, we report high-k MiM capacitors including Ta 2O5, TaOxNy, HfO2, Al2O3 and Ta2O5/Al2O 3 stack layer integrated in 0.13 μm 8-level Cu-metallization technology using Cu barrier as both top and bottom electrodes. Ta 2O5 exhibits excellent voltage and temperature linearity of capacitance. Al2O3 shows low leakage but poor voltage and temperature linearity. Voltage linearity could be significantly affected by high-k deposition temperature. We present high-k MiM capacitors with voltage linearity as low as 25 ppm/V and 133 ppm/V2.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 2003|
|Event||2003 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 10 Jun 2003 → 12 Jun 2003