Characterization and Comparison of High-k Metal-Insulator-Metal (MiM) Capacitors in 0.13 μm Cu BEOL for Mixed-Mode and RF Applications

Y. L. Tu*, H. L. Lin, L. L. Chao, Danny Wu, C. S. Tsai, C. Wang, C. F. Huang, C. H. Lin, Jack Sun

*Corresponding author for this work

Research output: Contribution to journalConference article

53 Scopus citations

Abstract

In this paper, we report high-k MiM capacitors including Ta 2O5, TaOxNy, HfO2, Al2O3 and Ta2O5/Al2O 3 stack layer integrated in 0.13 μm 8-level Cu-metallization technology using Cu barrier as both top and bottom electrodes. Ta 2O5 exhibits excellent voltage and temperature linearity of capacitance. Al2O3 shows low leakage but poor voltage and temperature linearity. Voltage linearity could be significantly affected by high-k deposition temperature. We present high-k MiM capacitors with voltage linearity as low as 25 ppm/V and 133 ppm/V2.

Original languageEnglish
Pages (from-to)79-80
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 2003
Event2003 Symposium on VLSI Technology - Kyoto, Japan
Duration: 10 Jun 200312 Jun 2003

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