Abstract
In this study, the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however, the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHän.
| Original language | English |
|---|---|
| Pages (from-to) | 4333-4337 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 46 |
| Issue number | 7 A |
| DOIs | |
| State | Published - 4 Jul 2007 |
Keywords
- Drift
- ISFET
- MOSFET
- PH
- Sensitivity
- ZrO
Fingerprint Dive into the research topics of 'Characteristics of zirconium oxide gate ion-sensitive field-effect transistors'. Together they form a unique fingerprint.
Cite this
Chang, K-M., Chao, K. Y., Chou, T. W., & Chang, C. T. (2007). Characteristics of zirconium oxide gate ion-sensitive field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(7 A), 4333-4337. https://doi.org/10.1143/JJAP.46.4333