Characteristics of zirconium oxide gate ion-sensitive field-effect transistors

Kow-Ming Chang*, Kuo Yi Chao, Ting Wei Chou, Chin Tien Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

In this study, the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however, the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHän.

Original languageEnglish
Pages (from-to)4333-4337
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number7 A
DOIs
StatePublished - 4 Jul 2007

Keywords

  • Drift
  • ISFET
  • MOSFET
  • PH
  • Sensitivity
  • ZrO

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