Characteristics of zirconium oxide gate ion-sensitive field-effect transistors

Kow-Ming Chang; Kuo Yi Chao; Ting Wei Chou; Chin Tien Chang

doi:10.1143/JJAP.46.4333

Characteristics of zirconium oxide gate ion-sensitive field-effect transistors

Kow-Ming Chang^*, Kuo Yi Chao, Ting Wei Chou, Chin Tien Chang

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this study, the zirconium oxide (ZrO₂) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO₂ membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however, the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHän.

Original language	English
Pages (from-to)	4333-4337
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	7 A
DOIs	https://doi.org/10.1143/JJAP.46.4333
State	Published - 4 Jul 2007

Keywords

Drift
ISFET
MOSFET
PH
Sensitivity
ZrO

Access to Document

10.1143/JJAP.46.4333

Fingerprint Dive into the research topics of 'Characteristics of zirconium oxide gate ion-sensitive field-effect transistors'. Together they form a unique fingerprint.

Cite this

@article{89f1489ce03049b092d1f939e0de06c0,

title = "Characteristics of zirconium oxide gate ion-sensitive field-effect transistors",

abstract = "In this study, the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however, the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deH{\"a}n.",

keywords = "Drift, ISFET, MOSFET, PH, Sensitivity, ZrO",

author = "Kow-Ming Chang and Chao, {Kuo Yi} and Chou, {Ting Wei} and Chang, {Chin Tien}",

year = "2007",

month = jul,

day = "4",

doi = "10.1143/JJAP.46.4333",

language = "English",

volume = "46",

pages = "4333--4337",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 A",

}

TY - JOUR

T1 - Characteristics of zirconium oxide gate ion-sensitive field-effect transistors

AU - Chang, Kow-Ming

AU - Chao, Kuo Yi

AU - Chou, Ting Wei

AU - Chang, Chin Tien

PY - 2007/7/4

Y1 - 2007/7/4

N2 - In this study, the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however, the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHän.

AB - In this study, the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however, the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHän.

KW - Drift

KW - ISFET

KW - MOSFET

KW - PH

KW - Sensitivity

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=34547842184&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.4333

DO - 10.1143/JJAP.46.4333

M3 - Article

AN - SCOPUS:34547842184

VL - 46

SP - 4333

EP - 4337

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 7 A

ER -