Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method

P. Y. Yang, J. L. Wang, W. C. Tsai, S. J. Wang, P. C. Chen, N. C. Su, J. C. Lin, I. C. Lee, C. T. Chang, Y. C. Wei, Huang-Chung Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages345-353
Number of pages9
Edition5
DOIs
StatePublished - 1 Dec 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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