Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method

P. Y. Yang; J. L. Wang; W. C. Tsai; S. J. Wang; P. C. Chen; N. C. Su; J. C. Lin; I. C. Lee; C. T. Chang; Y. C. Wei; Huang-Chung Cheng

doi:10.1149/1.3481257

Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method

P. Y. Yang, J. L. Wang, W. C. Tsai, S. J. Wang, P. C. Chen, N. C. Su, J. C. Lin, I. C. Lee, C. T. Chang, Y. C. Wei, Huang-Chung Cheng

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm ² /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 ⁶ , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.

Original language	English
Title of host publication	Thin Film Transistors 10, TFT 10
Pages	345-353
Number of pages	9
Edition	5
DOIs	https://doi.org/10.1149/1.3481257
State	Published - 1 Dec 2010
Event	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States Duration: 11 Oct 2010 → 15 Oct 2010

Publication series

Name	ECS Transactions
Number	5
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
Country	United States
City	Las Vegas, NV
Period	11/10/10 → 15/10/10

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Yang, P. Y., Wang, J. L., Tsai, W. C., Wang, S. J., Chen, P. C., Su, N. C., Lin, J. C., Lee, I. C., Chang, C. T., Wei, Y. C., & Cheng, H-C. (2010). Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 345-353). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481257

@inproceedings{2241dd3938bb4a2cbf7882e19cf08739,

title = "Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method",

abstract = " In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.",

author = "Yang, {P. Y.} and Wang, {J. L.} and Tsai, {W. C.} and Wang, {S. J.} and Chen, {P. C.} and Su, {N. C.} and Lin, {J. C.} and Lee, {I. C.} and Chang, {C. T.} and Wei, {Y. C.} and Huang-Chung Cheng",

year = "2010",

month = dec,

day = "1",

doi = "10.1149/1.3481257",

language = "English",

isbn = "9781566778244",

series = "ECS Transactions",

number = "5",

pages = "345--353",

booktitle = "Thin Film Transistors 10, TFT 10",

edition = "5",

note = "null ; Conference date: 11-10-2010 Through 15-10-2010",

}

Yang, PY, Wang, JL, Tsai, WC, Wang, SJ, Chen, PC, Su, NC, Lin, JC, Lee, IC, Chang, CT, Wei, YC & Cheng, H-C 2010, Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 345-353, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 11/10/10. https://doi.org/10.1149/1.3481257

Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. / Yang, P. Y.; Wang, J. L.; Tsai, W. C.; Wang, S. J.; Chen, P. C.; Su, N. C.; Lin, J. C.; Lee, I. C.; Chang, C. T.; Wei, Y. C.; Cheng, Huang-Chung.

Thin Film Transistors 10, TFT 10. 5. ed. 2010. p. 345-353 (ECS Transactions; Vol. 33, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yang, P. Y.

AU - Wang, J. L.

AU - Tsai, W. C.

AU - Wang, S. J.

AU - Chen, P. C.

AU - Su, N. C.

AU - Lin, J. C.

AU - Lee, I. C.

AU - Chang, C. T.

AU - Wei, Y. C.

AU - Cheng, Huang-Chung

PY - 2010/12/1

Y1 - 2010/12/1

N2 - In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.

AB - In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.

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BT - Thin Film Transistors 10, TFT 10

Y2 - 11 October 2010 through 15 October 2010

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