Characteristics of vertical p-channel MOSFETs for high density circuit application

D. S. Wen, W. H. Chang, T. V. Rajeevakumar, G. B. Bronner, P. A. Mcfarland, Y. Lii, T. C. Chen, F. L. Pesavento, M. P. Manny, Wei Hwang, S. H. Dhong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Vertical p-channel MOSFETs have been experimentally fabricated and characterized. Device characteristics of vertical p-channel MOSFETs are comparable to those of planar surface devices. Conduction current of a vertical transistor can be increased as much as four times that of a planar transistor for the same device area. The feature of large W/L ratio allows further increase in device density. Conduction current increases linearly with the channel width. No 3D current conduction degradation effect has been observed. It is found that the crystallographic orientation of the conduction channel has some effect on the threshold and sub-threshold characteristics, due to oxide thickness difference or fixed charges in the oxide interface.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages376-379
Number of pages4
ISBN (Electronic)078030036X, 9780780300361
DOIs
StatePublished - 1 Jan 1991
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 22 May 199124 May 1991

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period22/05/9124/05/91

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